| 2026 |
B. Negi, H. Kumar, H. Muthusamy and Vivek Kumar |
Gaussian Process Regression–Driven Thermal Modeling of 5 nm Stacked Nanosheet FETs for Advanced CMOS Thermal Management and Reliability |
IEEE Transactions on Components, Packaging and Manufacturing Technology |
SCI |
Q1 |
3.3 |
| 2025 |
J. Patel , B. Satwik, N. Bagga, I. Bais, C. Arora, Vivek Kumar, A. Dixit , N. Kumar, V. Georgiev, S. Dasgupta |
Machine learning augmented TCAD assessment of corner radii in nanosheet FET |
Solid State Electronics |
SCI |
Q2 |
1.5 |
| 2025 |
V. Kumar, D. Kumar Sharma, S. Dasgupta and A. Datta |
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET, vol. 72, no. 3, pp. 1293-1300 |
IEEE Transactions on Electron Devices |
SCI |
Q1 |
2.9 |
| 2024 |
J. Patel, N. Aggarwal, N. Bagga, Vivek Kumar, S. Dasgupta, |
Small-Signal Non-Quasi-Static Model of Multi-Fin FinFET for Analog and Linearity Analysis: Role of the Gate Resistance |
Journal of Computational Electronics, https://doi.org/10.1007/s10825-023-02127-4 |
SCI |
Q2 |
2.1 |
| 2023 |
Deepak Kumar Sharma and Vivek Kumar |
Impact of heavy ions on a-Si:H/PolySi bilayer Thin Film Transistors with Schottky Barrier Source and Drain based on Nickel Silicide |
Elsevier: Memories - Materials, Devices, Circuits and Systems |
SCI |
Q2 |
NA |
| 2023 |
Komal Mishra, Vivek Kumar, Arnab Datta |
Monte Carlo Modeling of Growth Delay in Atomic Layer Deposited WS2 on SiO2 Substrate based on Kinetic Extrapolation of Reaction Entropy and Enthalpy |
IEEE Transactions on Nanotechnology |
SCI |
Q1 |
2.57 |
| 2023 |
Vivek Kumar, Sudeb Dasgupta, and Arnab Datta |
Device Level Thermal Management in Multi-Fin SOI-FinFET Through Fin Pitch Design Employing Cooperative Game Theory," doi: 10.1109/TCPMT.2023.3290647. |
IEEE Transactions on Components, Packaging and Manufacturing Technology |
SCI |
Q1 |
3.3 |
| 2023 |
Vivek Kumar, Jyoti Patel, Arnab Datta, Sudeb Dasgupta, |
Study of Self Heating Effect in the wake of complete and partial bottom dielectric insertion under 5 nm Stacked Nanosheet Transistor |
Elsevier: Memories - Materials, Devices, Circuits and Systems, |
SCI |
Q2 |
NA |
| 2021 |
Vivek Kumar, S. Dasgupta and A. Datta |
A Thermal Circuit Representing Frequency Dependent Dynamic Heating Between Electron and Lattice in SOI-FinFET," vol. 21, no. 4, pp. 579-586 |
IEEE Transactions on Device and Materials Reliability |
SCI |
Q1 |
1.886 |
